smd type ic www.kexin.com.cn 1 smd type ic 1: source 1 2: gate 1 7,8: drain 1 3: source 2 4: gate 2 5,6: drain 2 dual 30v p-channel powertrench mosfet KDS4953 features -5 a, -30 v. r ds(on) = 55m @v gs = -10v r ds(on) = 95m @v gs =-4.5v low gate charge(6nc typical) high performance trench technology for extremely low r ds(on) high power and current handling capability fast switching speed absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss -30 v gate to source voltage v gs 20 v drain current continuous (note 1a) -5 a drain current pulsed -20 a power dissipation for single operation (note 1a) 2 power dissipation for single operation (note 1b) 1.6 power dissipation for single operation (note 1c) 1 operating and storage temperature t j ,t stg -55to175 thermal resistance junction to ambient (note 1a) r ja 78 /w thermal resistance junction to case (note 1) r jc 40 /w i d p d w www..net
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss v gs =0v,i d = -250 a -30 v breakdown voltage temperature coefficient i d = -250 a, referenced to 25 -23 mv/ zero gate voltage drain current i dss v ds =-24v,v gs =0v -1 a gate-body leakage, forward i gssf v gs =-20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =20v,v ds = 0 v -100 na gate threshold voltage(not 2) v gs(th) v ds =v gs ,i d = -250 a -1 -1.7 -3 v gate threshold voltage temperature coefficient(not 2) i d = -250 a, referenced to 25 4.5 mv/ v gs =-10v,i d =-5 a 46 55 v gs =-4.5v,i d = -3.3 a 70 95 v gs =-10v,i d =-5 a,t j = 125 63 85 on?state drain current i d(on) v gs =-10v,v ds =-5v -20 a forward transconductance g fs v ds =-5v,i d = -5a 10 s input capacitance c iss 528 pf output capacitance c oss 132 pf reverse transfer capacitance c rss 70 pf turn-on delay time t d(on) 714ns turn-on rise time tr 13 24 ns turn-off delay time t d(off) 14 25 ns turn-off fall time t f 917ns total gate charge q g 69nc gate-source charge q gs 2.2 nc gate-drain charge q gd 2nc maximum continuous drain?source diode forward current i s -1.3 a drain?source diode forward voltage v sd v gs =0v,i s =-1.3a (note 2) -0.8 -1.2 v m r ds(on) static drain-source on-resistance(not 2) v dd =-15v,i d =-1a,v gs =-10v,r gen =6 (note 2) v ds =-15v,v gs =0v,f=1.0mhz v ds =-15v,i d =-5 a,v gs =-5v(note 2) KDS4953
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